Radio frequency (rf) integrated circuit performing signal amplification operation to support carrier aggregation and receiver including the same

ABSTRACT

A receiver includes an amplification block supporting carrier aggregation (CA). The amplification block includes a first amplifier circuit configured to receive a radio frequency (RF) input signal at a block node from an outside source, amplify the RF input signal, and output the amplified RF input signal as a first RF output signal. The first amplifier circuit includes a first amplifier configured to receive the RF input signal through a first input node to amplify the RF input signal, and a first feedback circuit coupled between the first input node and a first internal amplification node of the first amplifier to provide feedback to the first amplifier.

CROSS-REFERENCE TO RELATED APPLICATION

This U.S. non-provisional application claims the benefit of priorityunder 35 U.S.C. 119 to Korean Patent Application No. 10-2018-0039334,filed on Apr. 4, 2018, in the Korean Intellectual Property Office, thedisclosure of which is incorporated by reference in its entirety herein.

BACKGROUND 1. Technical Field

The inventive concept relates to a receiver supporting carrieraggregation, and more particularly, to a radio frequency (RF) integratedcircuit for amplifying a received RF input signal and outputting theamplified RF input signal as an RF output signal, and a receiverincluding the RF integrated circuit.

2. Discussion of Related Art

A wireless communication device modulates an RF signal by transmittingdata on a specific carrier wave, amplifies the modulated RF signal, andtransmits the amplified modulated RF signal to a wireless communicationnetwork. In addition, the wireless communication device may receive anRF signal from a wireless communication network, amplify the received RFsignal, and demodulate the amplified RF signal. To transmit and receivemore data, the wireless communication device may support carrieraggregation, which involves transmission and reception of RF signalsmodulated with multiple carriers. Generally, a receiver (or atransceiver) of a wireless communication device for supporting carrieraggregation includes an antenna interface circuit (or an RF front-endmodule) for generating an RF input signal by filtering RF signalsreceived through an antenna by frequency bands and an RF integratedcircuit for amplifying the RF input signal and outputting the amplifiedRF input signal as an RF output signal.

When a wireless communication device supports carrier aggregation, an RFintegrated circuit capable may be needed to prevent degradation due tonoise or provide an amplification gain characteristic related toamplification of an RF input signal. Further, there is a need for an RFintegrated circuit that is compatible with antenna interface circuits ofdifferent manufacturers.

SUMMARY

At least one embodiment of the inventive concept provides a radiofrequency (RF) integrated circuit supporting carrier aggregation withimproved noise characteristics or amplification gain characteristics andis compatible with various antenna interface circuits, and a receiverincluding the RF integrated circuit.

According to an exemplary embodiment of the inventive concept, there isprovided a receiver including an amplification circuit supportingcarrier aggregation (CA). The amplification circuit includes a firstamplifier circuit configured to receive a radio frequency (RF) inputsignal at a block node from an outside source, and amplify the RF inputsignal to output the amplified RF input signal as a first RF outputsignal. The first amplifier circuit includes a first amplifierconfigured to receive the RF input signal through a first input node toamplify the RF input signal, and a first feedback circuit coupledbetween the first input node and a first internal amplification node ofthe first amplifier to provide feedback to the first amplifier.

According to an exemplary embodiment of the inventive concept, there isprovided a radio frequency (RF) integrated circuit including anamplification circuit configured to support carrier aggregation. Theamplification circuit includes a first amplifier circuit configured toreceive an RF input signal at a block node from an outside source. Thefirst amplifier circuit includes a first amplifier configured to amplifythe RF input signal and output the amplified RF input signal as a firstRF output signal. The first amplifier circuit includes a feedbackcircuit coupled between a first input node of the first amplifierreceiving the RF input signal and a first internal amplification node ofthe first amplifier. The feedback circuit is configured to selectivelyprovide feedback to the first amplifier according to whether a mode ofthe RF integrated circuit is set to one of a wideband mode and anarrowband mode.

According to an exemplary embodiment of the inventive concept, there isprovided a method of controlling a receiver. The method includes:determining an operation mode of the receiver to be one of a narrowbandmode and a wideband mode based on a configuration of an antennainterface circuit; setting a first control signal according to thedetermined mode; outputting the first control signal to the receiver toenable or disable a feedback circuit of the receiver; and connecting thereceiver to the antenna interface circuit. The receiver includes anamplifier configured to receive a radio frequency (RF) input signalthrough an input node and amplify the received RF input signal. Thefeedback circuit is connected between the input node and an internalamplification node of the amplifier to provide feedback to theamplifier.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the inventive concept will be more clearly understoodfrom the following detailed description taken in conjunction with theaccompanying drawings in which:

FIG. 1 is a diagram illustrating a wireless communication device forperforming a wireless communication operation and a wirelesscommunication system including the same;

FIGS. 2A to 2D and FIGS. 3A and 3B are diagrams for explaining adescription of carrier aggregation (CA);

FIG. 4 is a block diagram illustrating a wireless communication deviceof FIG. 1 according to an exemplary embodiment of the inventive concept;

FIGS. 5A and 5B are diagrams for explaining an embodiment of an antennainterface circuit included in a receiver;

FIG. 6A is a block diagram specifically illustrating a CA low noiseamplifier (LNA) and output circuits of FIG. 5A, and FIG. 6B is a blockdiagram specifically illustrating a multi input multi output (MIMO) LNAand output circuits of FIG. 5B;

FIG. 7A is a diagram for explaining an operation of a receiver in aninterband CA, and FIG. 7B is a diagram for explaining an operation of areceiver in an intraband CA;

FIGS. 8A to 8C are block diagrams illustrating an embodiment of anamplification block of FIG. 6A;

FIGS. 9A and 9B are block diagrams illustrating an embodiment of aplurality of amplifier circuits included in the amplification block ofFIG. 6A;

FIG. 10 is a block diagram illustrating an embodiment of a plurality ofamplifier circuits included in the amplification block of FIG. 6A, whichis compatible with various interface circuits;

FIGS. 11A and 11B are block diagrams illustrating an embodiment of aplurality of amplifier circuits included in the amplification block ofFIG. 6A;

FIGS. 12A and 12B are block diagrams illustrating an embodiment of aplurality of amplifier circuits included in the amplification block ofFIG. 6A, which is compatible with various interface circuits;

FIG. 13 is a diagram for explaining an amplification block according toan embodiment of the inventive concept, FIG. 14A is a view forexplaining an operation in the wide band mode of the amplificationblock, and FIG. 14B is a diagram for explaining an operation of aamplification block in a narrowband mode;

FIG. 15 is a diagram of a wireless communication device according to anexemplary embodiment of the inventive concept; and

FIG. 16 is a flowchart illustrating a method of manufacturing areceiver, according to an exemplary embodiment of the inventive concept.

DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

Below, embodiments of the inventive concept will be described in detailwith reference to accompanying drawings.

FIG. 1 is a diagram illustrating a wireless communication device 100 forperforming wireless communication operations and a wirelesscommunication system 10 including the same.

Referring to FIG. 1, the wireless communication system 10 may be any ofa long term evolution (LTE) system, a code division multiple access(CDMA) system, a global system for mobile communication (GSM), and awireless local area network (WLAN). In addition, CDMA systems may beimplemented in various CDMA versions, such as wideband CDMA (WCDMA),time division synchronous CDMA (TD-SCDMA), CDMA 2000.

The wireless communication system 10 may include at least two basestations 110 and 112 and a system controller 120. However, embodimentsof the inventive concept are not limited thereto. For example, thewireless communication system 10 may include a plurality of basestations and a plurality of network entities. The wireless communicationdevice 100 may be referred to as user equipment (UE), a mobile station(MS), a mobile terminal (MT), a user terminal (UT), a subscriber station(SS), and the like. The base stations 110 and 112 may include fixedstations that communicate with the wireless communication device 100and/or other base stations, thereby transmitting and receiving a radiofrequency (RF) signal including a data signal and/or controlinformation. The base stations 110 and 112 may be referred to as a NodeB, an evolved Node B (eNB), a base transceiver system (BTS), an accesspoint (AP), and the like.

The wireless communication device 100 may communicate with the wirelesscommunication system 10 and may receive signals from a broadcast station114. Furthermore, the wireless communication device 100 may receive asignal from a satellite 130 of a global navigation satellite system(GNSS). The wireless communication device 100 may include radioequipment for performing a wireless communication (e.g., LTE, CDMA 2000,WCDMA, TD-SCDMA, GSM, 802.11, etc.).

In an exemplary embodiment, the wireless communication device 100supports carrier aggregation for performing transmission and receptionoperations using a plurality of carriers. The wireless communicationdevice 100 may perform wireless communication with the wirelesscommunication system 10 in a low band, a mid band, and a high band. Eachof the low band, mid band, and high band may be referred to as a bandgroup, and each band group may include a plurality of frequency bands.For example, in LTE, one frequency band may cover up to 20 MHz. Acarrier aggregation (hereinafter referred to as CA) may be classifiedinto an intra-band CA and an inter-band CA. The intra-band CA refers toperforming a wireless communication operation using a plurality ofcarriers within the same frequency band, and the inter-band CA refers toperforming a wireless communication operation using a plurality ofcarriers within multiple frequency bands.

A receiver of the wireless communication device 100 according to anembodiment of the inventive concept may include an RF integrated circuitconfigured with improved noise characteristics or amplification gaincharacteristics when performing an amplification operation to process RFsignals received from external devices (e.g., the base stations 110 and112, the broadcast station 114, and the satellite 130). Furthermore, anRF integrated circuit according to an embodiment of the inventiveconcept may be compatible with antenna interface circuits of varioustypes included in the wireless communication device 100.

FIGS. 2A to 2D and FIGS. 3A and 3B are diagrams for explaining adescription of CA.

FIG. 2A is an exemplary diagram of intraband CA (i.e., intraband CA oncontiguous carriers). Referring to FIG. 2A, the wireless communicationdevice 100 of FIG. 1 transmits and receives signals using four adjacentcarriers in the same frequency band of a low band.

FIG. 2B is an exemplary diagram of intraband CA on non-contiguouscarriers. Referring to FIG. 2B, the wireless communication device 100performs transmission and reception of signals using four non-adjacentcarriers within the same frequency band of a low band. Respectivecarriers may be spaced apart and may be separated by, for example, 5MHz, 10 MHz, or another amount, respectively. Accordingly, the extentsto which respective carriers are spaced may have various frequencymagnitudes.

FIG. 2C is an exemplary diagram of inter-band CA in the same band group.Referring to FIG. 2C, the wireless communication device 100 performstransmission and reception of signals using four carriers in twofrequency bands included in the same band group. For example, the lowband may be divided into Low-Band 1 and Low-Band 2, where two of thefour carriers correspond to Low-Band 1 and the remaining two carrierscorrespond to Low-Band 2.

FIG. 2D is an exemplary diagram of inter-band CA across different bandgroups. Referring to FIG. 2D, the wireless communication device 100performs transmission and reception of signals using four carriersdistributed across multiple different band groups. Specifically, twocarriers are carriers in one frequency band included in the low band,and the remaining two carriers are carriers in one frequency bandincluded in the midband.

The inventive concept is not limited to specific CAs illustrated inFIGS. 2A to 2D. For example, the wireless communication device 100 maysupport various combinations of CAs for frequency bands or band groups.

Referring to FIG. 3A, to meet the demand for an increased bit rate,there are techniques for CAs that combine and operate on multiplefrequency bands at one or more base stations. Since long term evolution(LTE) for mobile networks realizes a data transmission speed of 100Mbps, large capacity video may be transmitted and received smoothly in awireless environment. FIG. 3A illustrates an example in which a datatransmission rate is increased up to 5 times by combining five frequencybands according to the LTE standard using a carrier integrationtechnique. In FIG. 3A, each of the carriers 1 to 5 is a carrier definedby LTE, and one frequency bandwidth is defined up to 20 MHz in the LTEstandard. Therefore, the wireless communication device 100 according toan embodiment of the inventive concept may improve a data rate with abandwidth of up to a maximum of 100 MHz.

FIG. 3A illustrates an example in which only carrier waves defined inLTE are combined, but the inventive concept is not limited thereto. Asillustrated in FIG. 3B, carriers of different wireless communicationnetworks may also be combined with each other. Referring to FIG. 3B,frequency bands based on not only LTE but also 3G and Wi-Fi standardsmay be combined together by combining frequency bands using a carrieraggregation technique. As such, LTE-A may adopt the carrier aggregationtechnique to perform faster data transmission.

FIG. 4 is a diagram illustrating the wireless communication device 100of FIG. 1 according to an exemplary embodiment of the inventive concept.

Referring to FIG. 4, a wireless communication device 200 includes atransceiver 220 connected to a primary antenna 210, a transceiver 250connected to a secondary antenna 212, and a data processor (orcontroller) 280. The transceiver 220 includes a plurality of receivers230 a to 230 k and a plurality of transmitters 240 a to 240 k. Thetransceiver 250 includes a plurality of receivers 260 a-2601 and aplurality of transmitters 270 a-270 l. The transceivers 220 and 250 maybe implemented to support a plurality of frequency bands, a plurality ofradio technologies, a carrier aggregation (CA), reception diversity, amultiple-input multiple-output (MIMO) scheme between a plurality oftransmission antennas and a plurality of reception antennas, and thelike.

As an example, each receiver of receivers 230 a to 230 k may include alow noise amplifier (LNA) 224 a-224 k and a receiving circuit 225 a-225k. A configuration of a first receiver 230 a may be applied to the otherreceivers 230 b to 230 k and 260 a to 260 _(l). Hereinafter, theconfiguration of the first receiver 230 a will be mainly described. Toreceive data, the primary antenna 210 may receive an RF signal from abase station and/or a transmitter station, and the like. The primaryantenna 210 may route the received RF signal, as an RF input signalgenerated through an operation such as frequency filtering, to areceiver selected through an antenna interface circuit 222. The antennainterface circuit 222 may include switch elements, a duplexer, a filtercircuit, an input matching circuit, and the like. The antenna interfacecircuit 222 may be implemented as an RF front end module. Although theantenna interface circuit 222 of FIG. 4 is illustrated as being includedin the transceiver 220, the antenna interface circuit 222 is not limitedthereto. For example, the antenna interface circuit 222 may be locatedin a separate RF front-end module outside the transceiver 220. In anembodiment, the LNA 224 a amplifies the received RF input signal andprovides the amplified RF output signal to the receiving circuit 225 a.

The LNA 224 a according to an embodiment of the inventive conceptincludes a feedback circuit capable of improving noise characteristicsor amplification gain characteristics during an amplification operationon an RF input signal. In addition, the LNA 224 a may include a circuitconfiguration configured to be compatible with the antenna interfacecircuit 222 and antenna interface circuits of various different types toperform an efficient amplification operation.

In an embodiment, the receiving circuit 225 a downconverts an RF outputsignal received from the LNA 224 a from the RF band to a baseband togenerate a baseband signal. The receiving circuit 225 a may be referredto as an output circuit configured to output an RF output signal. Thereceiving circuit 225 a may amplify and filter the baseband signal toprovide the amplified and filtered baseband signal to the data processor280. The receiving circuit 225 a may include mixers, filters,amplifiers, oscillators, local oscillation generators, phase lock loop(PLL) circuits, and the like.

As an example, each of transmitters 240 a to 240 k may include a poweramplifier 226 a-226 k and a transmission circuit 227 a-227 k. Aconfiguration of a first transmitter 240 a may be applied to the othertransmitters 240 b to 240 k and 270 a to 270 l. For example, each oftransmitters 270 a to 270 l may include a power amplifier 256 a-2561 anda transmission circuit 257 a-257 l. Hereinafter, a configuration of thefirst transmitter 240 a will be mainly described. For data transmission,the data processor 280 may process the data to be transmitted (e.g.,data encoding, data modulation) to provide the processed analog outputsignal to a selected transmitter.

In an embodiment, the transmission circuit 227 a upconverts the analogoutput signal from the baseband to the RF band and amplifies and filtersthe upconverted output signal to generate a modulated RF signal. Thetransmission circuit 227 a may include amplifiers, filters, mixers,input matching circuits, an oscillator, a local (LO) oscillator, a PLLcircuit, and the like. In an embodiment, the power amplifier 226 areceives and amplifies the modulated RF signal to provide a transmissionRF signal having an appropriate output power level to the primaryantenna 210 through the antenna interface circuit 222. An RF signalmodulated through the primary antenna 210 may be transmitted to a basestation or the like.

All or a portion of the transceivers 220 and 250 may be implemented asan analog integrated circuit, an RF integrated circuit, or amixed-signal integrated circuit. For example, LNAs 224 a-224 k and 254a-254 l and receiving circuits 225 a-225 k and 255 a-255 l may beimplemented as one module (e.g., an RF integrated circuit). In addition,the circuit configuration of the transceivers 220 and 250 may beimplemented in a variety of ways.

FIGS. 5A and 5B are diagrams for explaining implementation examples ofantenna interface circuits 320 a and 320 b included in receivers 300 aand 300 b.

Referring to FIG. 5A, the receiver 300 a includes an antenna 310 a, anantenna interface circuit 320 a, a carrier aggregation (CA) LNA 330 acapable of supporting CA, and a plurality of output circuits 340 a_1 to340 a_m. The CA LNA 330 a may be applied to at least one of the LNAs 224and 254 of FIG. 3. A configuration including the CA LNA 330 a and theoutput circuits 340 a_1 to 340 a_m may be defined as an RF integratedcircuit. The CA LNA 330 a may include a single input unit and a multi(M) output unit. The receiver 300 a may receive an RF signal (or adownlink signal) transmitted through an antenna 310 a using at least onecarrier in the same frequency band or in a different frequency band. Theantenna 310 a provides the received RF signal to the antenna interfacecircuit 320 a.

The antenna interface circuit 320 a includes a plurality of switchingunits (or multiplexers) 321 a and 324 a, a plurality of phase shiftcircuits 322 a_1 to 322 a_n, a plurality of duplexers 323 a_1 to 323a_n, and an external amplifier 325 a (or an external LNA LNA_E). Each ofthe switching units 321 a and 324 a includes switch elements SW11 to SW1n and SW21 to SW2 n. A first switching unit 321 a may route an RF signalto each of the phase shift circuits 322 a_1 to 322 a_n. Each of thephase shift circuits 322 a_1 to 322 a_n shift the routed RF signal by apredetermined phase to provide the shifted RF signal to each of thecorresponding duplexers 323 a_1 to 323 a_n. In an exemplary embodiment,each of the phase shift circuit 322 a_1 to 322 a_n shift the routed RFsignal by a different angle. In an embodiment, each of the duplexers 323a_1 to 323 a_n filters the provided RF signal by a frequency band. Theduplexers 323 a_1 to 323 a_n may include filters having differentfiltering frequency bands, respectively. For example, an RF signalfiltered according a given filtering frequency band may filter outcomponents that are outside the filtering frequency band. A secondswitching unit 324 a routes the filtered RF signal to an externalamplifier 325 a. The external amplifier 325 a amplifies the filtered RFsignal and outputs the amplified filtered RF signal to the CA LNA 330 aas an RF input signal RF_(IN). Although not illustrated in FIG. 5A, theantenna interface circuit 320 a may further include an impedancematching circuit for impedance matching between the antenna 310 a andthe CA LNA 330 a.

The CA LNA 330 a may be connected to the antenna interface circuit 320 athrough one port to receive the RF input signal RF_(IN). Since afrequency spectrum of an RF input signal RF_(IN) received by the CA LNA330 a is wide, the CA LNA 330 a may include a circuit configurationcapable of efficiently amplifying a wideband RF input signal RF_(IN). Adetailed circuit configuration of the CA LNA 330 a will be describedwith reference to FIG. 6A.

The CA LNA 330 a may amplify an RF input signal RF_(IN) from intrabandCA on contiguous carriers or intraband non-CA (i.e., intraband CA onnon-contiguous carriers) to output one RF output signal through one LNAoutput terminal. Alternatively, the CA LNA 330 a may amplify the RFinput signal RF_(IN) from the intraband CA by M carriers to output theamplified M RF output signals RF_(OUT1) to RF_(OUTm) through M LNAoutput units. The CA LNA 330 a may receive a mode control signal XMODfrom the outside and may operate in a single output mode or a multipleoutput mode based on the mode control signal XMOD. That is, the modecontrol signal XMOD may be a signal for controlling the CA LNA 330 a toperform an amplification operation corresponding to any one of non-CA(i.e., intraband CA on non-contiguous carriers), the interband CA, andthe intraband CA.

In a single output mode, the CA LNA 330 a operates in a 1-input,1-output configuration and receives an RF input signal RF_(IN) includingat least one signal transmitted by one carrier. A single output mode maybe used to receive signals transmitted by one carrier without CA. In amulti-output mode, the CA LNA 330 a may operate in the form of one inputand M outputs, and thus receives an RF input signal RF_(IN) includingsignals transmitted by a plurality of carriers, thereby outputting M RFoutput signals RF_(OUT1) to RF_(OUTm) to M output circuits 340 a_1 to340 a_m, respectively. One RF output signal may correspond to onecarrier. At least one of the output circuits 340 a_1 to 340 a_m mayreceive the RF output signal and may downconvert the received RF outputsignal to output the downconverted RF output signal as a basebandsignal. The output circuits 340 a_1 to 340 a_m may correspond to thereceiving circuits 225 and 255 of FIG. 3.

Referring to FIG. 5B, the receiver 300 b includes an antenna 310 b, anantenna interface circuit 320 b, a multi input multi output (MIMO) LNA330 b capable of supporting CA, and a plurality of output circuits 340b_1 to 340 b_m. The MIMO LNA 330 b may be applied to at least one of theLNAs 224 and 254 of FIG. 3. A configuration including the MIMO LNA 330 band the output circuits 340 b_1 to 340 b_m may be referred to as an RFintegrated circuit. The MIMO LNA 330 b may include N multi input unitsand M multi output units. The receiver 300 b may receive an RF signal(or downlink signal) transmitted via the antenna 310 b using at leastone carrier in the same frequency band or in a different frequency band.The antenna 310 b provides the received RF signal to the antennainterface circuit 320 b.

The antenna interface circuit 320 b includes a plurality of duplexers323 b_1 to 323 b_n. In an embodiment, each of the duplexers 320 b_1 to320 b_n filter the received RF signal by a frequency band. The duplexers320 b_1 to 320 b may include filters having different filteringfrequency bands, respectively. For example, a duplexer 320 b_1 mayfilter the RF signal to generate a first RF input signal RF_(IN1)transmitted using a carrier within a first frequency band. In addition,an Nth Duplexer 323 b_n may filter the RF signal to generate an Nth RFinput signal RF_(INn) transmitted using at least one carrier within theNth frequency band. Although not illustrated in FIG. 5B, the antennainterface circuit 320 b may further include an impedance matchingcircuit for impedance matching between the antenna 310 b and the MIMOLNA 330 b.

The MIMO LNA 330 b may be coupled to the antenna interface circuit 320 bthrough a plurality of ports (e.g., N ports) to receive the RF inputsignals RF_(IN1) to RF_(INn). Since a frequency spectrum of each of theRF input signals RF_(IN1) to RF_(INn) received by the MIMO LNA 330 bthrough the plurality of ports is narrow, the MIMO LNA 330 b may includecircuit configurations capable of efficiently amplifying narrowband RFinput signals RF_(IN1) to RF_(INn), respectively. A detailed circuitconfiguration of the MIMO LNA 330 b will be described with reference toFIG. 6B.

The MIMO LNA 330 b may receive one to N RF input signals RF_(IN1) toRF_(INn). For example, the MIMO LNA 330 b may amplify not only one RFinput signal received at non-CA or intraband CA but also N RF inputsignals received at the inter-band CA. The MIMO LNA 330 b may amplify RFinput signals RF_(IN1) to RF_(INn) to generate one to N to output RFoutput signals RF_(OUT1) to RF_(OUTm) to output the amplified RF inputsignals RF_(IN1) to RF_(INn) to the output circuits 340 b_1 to 340 b_m,respectively.

The MIMO LNA 330 b may receive a mode control signal XMOD from outsideand may operate in any one of a single output mode, an intra-band CAmode, and an inter-band CA mode based on the mode control signal XMOD.In the single output mode, the MIMO LNA 330 b operates in a one inputand one output configuration. In addition, the MIMO LNA 330 b mayreceive an RF input signal including at least one signal transmitted byone carrier and may amplify the received RF input signal to output oneRF output signal. In the intra-band CA mode, the MIMO LNA 330 b operatesin a one input and M output configuration. In addition, the MIMO LNA 330b may receive an RF input signal transmitted through a plurality ofcarriers in the same frequency band and may amplify the received RFinput signal to output one to M RF output signals RF_(OUT1) to RF_(OUTm)to M output circuits 340 b_1 to 340 b_m, respectively. One RF outputsignal may correspond to a carrier having a predetermined frequency. Inthe interband CA mode, the MIMO LNA 330 b operates in the form of Ninputs and M outputs. At least one of the output circuits 340 b_1 to 340b_m may receive the RF output signal and may downconvert the received RFoutput signal to output it as a baseband signal.

However, the inventive concept is not limited to the antenna interfacecircuits 320 a and 320 b illustrated in FIGS. 5A and 5B. For example,the antenna interface circuit 320 a or 320 b may be replaced antennainterface circuits of different configurations.

FIG. 6A is a block diagram specifically illustrating the CA LNA 330 aand the output circuits 340 a_1 to 340 a_m in FIG. 5A, and FIG. 6B is ablock diagram specifically illustrating the MIMO LNA 330 b and theoutput circuits 340 b_1 to 340 b_m in FIG. FIG. 5B. A configurationincluding a CA LNA 330 a and output circuits 340 a_1 to 340 a_m in FIG.6A, the MIMO LNA 330 b, and output circuits 340 b_1 to 340 b_m in FIG.6B may be defined as an RF integrated circuit.

Referring to FIG. 6A, the CA LNA 330 a includes a plurality ofamplification blocks 331 a_1 to 331 an. The amplification blocks 331 a_1to 331 a_n may receive and amplify the RF input signal RF_(IN) from theoutside via one port to output RF output signals RF_(OUT1) to RF_(OUTm).As described in FIG. 5A, the frequency spectrum of the RF input signalRF_(IN) may be wide, and thus the RF integrated circuit may operate in awide-band mode.

The amplification blocks 331 a_1 to 331 a_n may include a plurality ofamplifier circuits, respectively. Amplifier circuits included in theamplification blocks 331 a_1 to 331 a_n may be connected to outputcircuits 340 a_1 to 340 a_m, respectively. For example, a firstamplification block 331 a_1 may include M amplifier circuits, and theamplifier circuits may be connected in a one-to-one correspondence withthe M output circuits 340 a_1-340 a_m. A connection configurationbetween the first amplification block 331 a_1 and the output circuits340 a_1 to 340 a_m may be applied to a connection configuration betweenthe remaining amplification blocks 331 a_2 to 331 a_n and the outputcircuits 340 a_1 to 340 a_m. The amplification blocks 331 a_1 to 331 a_nmay receive a mode control signal XMOD capable of enabling or disablingamplifier circuits of the amplifier blocks according to the CA operationmode. Each of the amplifier circuits may perform an amplificationoperation on the RF input signal RF_(IN) based on the mode controlsignal XMOD.

An amplifier circuit according to an embodiment of the inventive conceptincludes a feedback circuit FB_CKT configured to provide a specificimpedance to maintain an input impedance of the amplifier circuit withina predetermined range and improves a noise characteristic or anamplification gain. For example, in the intra-band CA operation, since abroadband RF input signal RF_(IN) is received at one port, when the RFinput signal RF_(IN) is amplified and classified by a frequency, signaldegradation, power imbalance, or the like for each frequency of a signalin the RF input signal RF_(IN) may occur. Since the amplifier circuitincludes a feedback circuit FB_CKT, the above-described negative effectsmay be reduced or eliminated.

In an embodiment, the amplifier circuit include an amplifier configuredto receive the RF input signal RF_(IN) via the input node and amplifythe received RF input signal RF_(IN). In an embodiment, the feedbackcircuit FB_CKT is connected between an input node of the amplifier andan internal amplification node N_(INT) to provide feedback to theamplifier. Amplification blocks 331 a_1 to 331 a_n may include at leastone amplifier circuit provided with the above-described feedback circuitFB_CKT. Furthermore, the amplification blocks 331 a_1 to 331 a_n mayinclude at least one amplifier circuit provided with a feedback circuitFB_CKT configured to be enabled and/or disabled.

The first output circuit 340 a_1 includes a load circuit 341 a_11 and adownconverter circuit 342 a_21. A configuration of the first outputcircuit 340 a_1 may be applied to the other output circuits 340 a_2 to340 a_m. Each of the output circuits 340 a_1 to 340 a_m may receive anddownconvert any one of RF output signals RF_(OUT1) to RF_(OUTm) tooutput baseband signals XBAS_(OUT1) to XBAS_(OUTm). In an embodiment,the downconverter circuit 342 a_21 receives an input signal and convertsthe received input signal to an output signal having a lower frequencythat the input signal.

Referring to FIG. 6B, a MIMO LNA 330 b includes a plurality ofamplification blocks 331 b_1 to 331 bn. The amplification blocks 331 b_1to 331 b_n receive and amplify RF input signals RF_(IN1) to RF_(INn) tooutput RF output signals RF_(OUT1) to RF_(OUTm), respectively. Asdescribed in FIG. 5B, since a frequency spectrum of each of the RF inputsignals RF_(IN1) to RF_(INn) is narrow, an RF integrated circuit mayoperate in a narrow-band mode.

The amplification blocks 331 b_1 to 331 b_n may include a plurality ofamplifier circuits, respectively. Amplifier circuits included in theamplification blocks 331 b_1 to 331 b_n may be connected to outputcircuits 340 b_1 to 340 b_m, respectively. A connection configurationbetween the amplification blocks 331 b_1 to 331 b_n and the outputcircuits 340 b_1 to 340 b_m is the same as the connection configurationbetween the amplification blocks 331 a_1 to 331 b_n and the outputcircuits 340 b_1 to 340 b_m described in FIG. 6A, and a detaileddescription will be omitted.

Unlike an amplifier circuit FIG. 6A, an amplifier circuit of FIG. 6Baccording to an exemplary embodiment of the inventive concept does notinclude the feedback circuit FB_CKT, or the feedback circuit FB_CKT isdisabled. That is, when the RF integrated circuit is in the narrow bandmode, the feedback circuit FB_CKT is not used or the amplifier circuitis implemented not to include the feedback circuit FB_CKT. In analternative embodiment, the amplifier circuit includes the feedbackcircuit FB_CKT, but is implemented to disable it.

In an embodiment, the amplifier circuit includes an amplifier configuredto receive the RF input signal RF_(IN) via the input node and amplifythe received RF input signal RF_(IN).

The first output circuit 340 b_1 may include a load circuit 341 b_11 anda downconverter circuit 342 b_21. A configuration of the first outputcircuit 340 b_1 may be applied to the other output circuits 340 b_2 to340 b_m. The output circuits 340 b_1 to 340 b_m may receive anddownconvert any one of RF output signals RF_(OUT1) to RF_(OUTm) tooutput baseband signals XBAS_(OUT1) to XBAS_(OUTm).

FIG. 7A is a diagram for explaining an operation of a receiver 500 in aninterband CA, and FIG. 7B is a diagram for explaining the operation ofthe receiver 500 in an intraband CA.

Referring to FIG. 7A, a receiver 500 includes a MIMO LNA 540 and firstto fifth output circuits 550_1 to 550_5, and the MIMO LNA 540 mayinclude first to eighth amplification blocks AMPB_1 to AMPB_8.Hereinafter, it will be assumed that an RF signal is transmitted using afirst carrier ω1 of a first frequency band, a second carrier ω2 of thethird frequency band, and a third carrier ω3 of a fifth frequency bandat the base station. The first output circuit 550_1 includes a firstload circuit 551_1 and a first downconverter circuit 552_1. The secondoutput circuit 550_2 includes a second load circuit 551_2 and a seconddownconverter circuit 552_2. The third output circuit 550_3 includes athird load circuit 551_3 and a third downconverter circuit 552_3. Thefourth output circuit 550_4 includes a fourth load circuit 551_4 and afourth downconverter circuit 552_4. The fifth output circuit 550_5includes a fifth load circuit 551_5 and a fifth downconverter circuit552_5.

First, some number of amplification blocks AMPB_1, AMPB_3, and AMPB_5 ofamplification blocks AMPB_1 to AMPB_8 are enabled, and the enabledamplification blocks AMPB_1, AMPB_3, and AMPB_5 receive RF input signalsRF_(IN1) to RF_(IN3) corresponding to three carriers (i.e., the first tothird carriers) ω1 to ω3, respectively. The first amplification blockAMPB_1 amplifies the first to third RF input signals RF_(IN1) toRF_(IN3) and outputs the amplified first to third RF output signalsRF_(OUT1) to RF_(OUT3) to the enabled first to third output circuits550_1 to 550_3, respectively. The enabled output circuits 550_1 to 550_3may output baseband signals XBAS_(OUT1) to XBAS_(OUT3) corresponding tothe three carriers ω1 to ω3, respectively.

Referring to FIG. 7B, the receiver 500 includes a CA LNA 540 and firstthrough fifth output circuits 550_1 to 550_5, and the MIMO LNA 540 mayinclude first to eighth amplification blocks AMPB_1 to AMPB_8.Hereinafter, it will be assumed that a base station transmits an RFsignal using the first carrier ω1, the second carrier ω2 and the thirdcarrier ω3 in the same frequency band. As described above, at least oneamplifier circuit included in the first to eighth amplification blocksAMPB_1 to AMPB_8 may include a feedback circuit.

First, a first amplification block AMPB_1 of the amplification blocksAMPB_1 to AMPB_8 is enabled and the enabled amplification block AMPB_1amplifies the first RF input signal RF_(IN1) corresponding to the firstto third carriers ω1 to ω3. The first amplification block AMPB_1amplifies the first RF input signal RF_(IN1) to output the first RFoutput signal RF_(OUT1) corresponding to the first carrier ω1 to theenabled first output circuit 550_1. In addition, the first amplificationblock AMPB_1 amplifies the first RF input signal RF_(IN1) to output thesecond RF output signal RF_(OUT2), corresponding to the second carrierω2, to the enabled second output circuit 550_2. Finally, the firstamplification block AMPB_1 amplifies the first RF input signal RF_(IN1)to output the third RF output signal RF_(OUT3), corresponding to thethird carrier ω3, to the enabled third output circuit 550_3. The enabledoutput circuits 550_1 to 550_3 may output baseband signals XBAS_(OUT1)to XBAS_(OUT3) corresponding to the three carriers ω1 to ω3,respectively. Hereinafter, a detailed configuration of an amplificationblock according to an embodiment of the inventive concept will bedescribed.

FIGS. 8A to 8C are block diagrams illustrating an embodiment of aconfiguration of the amplification blocks 331 a_1 to 331 a_n in FIG. 6A.

Referring to FIG. 8A, an amplifier circuit 600 includes an amplifier AMPand a feedback circuit 613. The amplifier AMP includes a firsttransistor 611 and a second transistor 612. In FIG. 8A, the firsttransistor 611 and the second transistor 612 are implemented with NMOStransistors, but the inventive concept is not limited thereto, andvarious types of transistors may be implemented.

A gate of the first transistor 611 receives the RF input signal RF_(IN)through an input node X of an amplifier AMP. In an embodiment, a sourceof the first transistor 611 is grounded and a drain of the firsttransistor 611 is coupled to a source of the second transistor 612 andan internal amplification node Y of the amplifier AMP. A gate of thesecond transistor 612 may be grounded or receive a predetermined voltageV_(A) based on a mode control signal XMOD. It is possible to controlenabling/disabling of the amplifier AMP (or the amplifier circuit 600)by turning on/off the second transistor 612 using the mode controlsignal XMOD. An RF output signal RF_(OUT) may be output through thedrain of the second transistor 612. Each of the first transistor 611 andthe second transistor 612 may be implemented as a cascode transistor(i.e., an equivalent circuit such as a resistance, capacitance, node, orterminal). That is, the first transistor 611 and the second transistor612 are connected in series, the first transistor 611 may operate as acommon source amplifier as an input terminal, and the second transistor612 may operate as a common gate amplifier as an output terminal, andthus the amplifier AMP may operate as a cascode amplifier.

A feedback circuit 613 according to an embodiment of the inventiveconcept is coupled between the input node X and the internalamplification node Y. A feedback circuit 613 may provide feedback to theamplifier AMP by applying an output from the internal amplification nodeY to the input node X. The feedback circuit 613 may be implemented tokeep an input impedance of the amplifier circuit 600 within a certainrange or to have a specific impedance to have an appropriate targetimpedance. In addition, the feedback circuit 613 may be implemented toimprove the linearity with respect to the amplification gain of theamplifier AMP. Referring to FIG. 8B, the feedback circuit 613 mayinclude at least one resistance element R_(F) and at least one capacitorelement C_(F).

Referring to FIG. 8C, the amplifier circuit 600 further includes aground connection circuit 614 and a coupling capacitor CC 615. Theground connection circuit 614 includes a switching element SWb and aninductor L. The feedback circuit 613′ of the amplifier circuit 600further includes a switch element SWa as compared to the feedbackcircuit 613 of FIG. 8b . The inductor L may be a source degenerationinductor, and one terminal of the inductor L may be grounded. Theamplifier circuit 600 according to an embodiment of the inventiveconcept determines a mode according to a configuration of an antennainterface circuit connected to the amplifier circuit, and switchelements SWa and SWb are controlled based on the determined mode. Thecoupling capacitor (CC) 615 may have a sufficiently large capacitance soas to have a smaller impedance compared to the feedback circuit 613′.The amplifier circuit 600 is not limited to the arrangement of thecoupling capacitor CC 615 illustrated in FIG. 8C. The coupling capacitorCC 615 may be connected between the input node X and the gate of thefirst transistor 611 and may be arranged in parallel with a feedbackcircuit 613′. In this case, an input node Z of the amplification blockand the input node X of the amplifier AMP may be the same node.

In an embodiment, when the amplifier circuit 600 is connected to anantenna interface circuit 320 a of FIG. 5A, a mode of the amplifiercircuit 600 is determined as a wideband mode, a switch element SWa isclosed, and a switch element SWb is grounded. When the amplifier circuit600 is connected to an antenna interface circuit 320 b of FIG. 5B, themode of the amplifier circuit 600 is determined as a narrow band mode,the switch element SWa is opened, and the switch element SWb isconnected to one terminal of an inductor L whose other terminal isconnected to a ground terminal.

That is, when the mode of the amplifier circuit 600 is in the wide bandmode, an impedance matching operation may be performed through thefeedback circuit 613 to improve the noise characteristic of theamplifier AMP and the feedback circuit 613 may provide feedback to theamplifier AMP, thereby improving the linearity of an amplificationoperation of the amplifier AMP. When the mode of the amplifier circuit600 is in the narrow band mode, the impedance matching may be performedthrough the inductor L to improve the noise characteristic of theamplifier AMP. Furthermore, linearity characteristics of theamplification operation of the amplifier AMP may be improved through theinductor L.

As such, since an amplifier circuit 600 of FIG. 8C is compatible withvarious antenna interface circuits, it may be possible to perform anefficient amplification operation on the RF input signal RF_(IN) whenthe CA operation is performed.

FIGS. 9A and 9B are block diagrams illustrating an embodiment of aplurality of amplifier circuits included in the amplification blocks 331a_1 to 331 a_n in FIG. 6A.

Referring to FIG. 9A, an amplification block 700 includes a firstamplifier circuit 710 and a second amplifier circuit 720. The firstamplifier circuit 710 includes a first amplifier AMP1, a feedbackcircuit 713 and a first coupling capacitor 715. The first amplifiercircuit 710 amplifies the RF input signal RF_(IN) and outputs theamplified signal RF_(IN) to a first output signal RF_(OUT1). The secondamplifier circuit 720 includes a second amplifier AMP2 and a secondcoupling capacitor 725. The second amplifier circuit 720 is implementednot to include the feedback circuit 713 of the first amplifier circuit710. Thus a configuration of the second amplifier circuit 720 isdifferent from that of the first amplifier circuit 710. Configurationsof the first amplifier circuit 710 and the second amplifier circuit 720are described in detail in FIGS. 8A to 8C, and hereinafter, thedescription will be focused on features that have not been describedabove.

In an embodiment, the second amplifier AMP2 includes a third transistor721 and a fourth transistor 722, and may correspond to a cascodeamplifier. The second amplifier circuit 720 is connected in series withan internal amplification node Y of the first amplifier AMP1. The secondamplifier AMP2 receives a signal from the internal amplification node Ythrough an input node of the second amplifier AMP2, and amplifies thesignal to output the amplified signal as a second output signalRF_(OUT2).

In an embodiment, an amplification gain corresponding to the internalamplification node Y has a predetermined value. That is, a signal outputfrom the internal amplification node Y is a signal obtained byamplifying the RF input signal RF_(IN) by a predetermined amplificationgain. In an embodiment, a transconductance of each of a first transistor711 and a second transistor 712 are different from one another so thatthe amplification gain corresponding to the internal amplification nodeY has a predetermined value. For example, a transconductance of thefirst transistor 711 may be greater than a transconductance of thesecond transistor 712, and thus the internal amplification node Y mayhave an amplification gain greater than a reference value. Theamplification gain at the internal amplification node Y may be expressedas—gm1/gm2 (where gm1 is a transconductance of the first transistor 711and gm2 is the transconductance of the second transistor 712. Thetransconductance of the first transistor 711 and the second transistor712 may be realized to have different values by adjusting widths (orwidth functions) of the transistors 711 and 712, respectively.

Since the second amplifier circuit 720 receives a signal whose inputsignal RF_(IN) is amplified by a predetermined amplification gainthrough the internal amplification node Y, a power consumed to output asecond RF output signal RF_(OUT2) having the same magnitude as amagnitude of a first RF output signal R_(FOUT1) may be lower than apower consumed by the first amplifier circuit 710 to output the first RFoutput signal RF_(OUT1). In an embodiment, an amplification gain of thesecond amplifier circuit 720 (or the second amplifier AMP2) is differentfrom that of the first amplifier circuit 710 (or the first amplifierAMP1) such that the magnitude of the second RF output signal RF_(OUT2)is equal to that of the first RF output signal RF_(OUT1).

In an embodiment, an amplification gain of an internal amplificationnode (i.e., a node where the drain of the third transistor 721 and thesource of the fourth transistor 722 are connected) of the secondamplifier AMP2 of the second amplifier circuit 720 is different from anamplification gain of an internal amplification node Y of the firstamplifier AMP1 of the first amplifier circuit 710. Accordingly, atransconductance ratio between the first transistor 711 and the secondtransistor 712 of the first amplifier AMP1 is different from thatbetween a third transistor 721 and a fourth transistor 722 of the secondamplifier AMP2.

In an embodiment, the feedback circuit 713 has a sufficient impedance sothat the input impedance Z_(IN1) viewed from the input terminal of theamplification block 700 is maintained within a predetermined rangeirrespective of whether the second amplifier circuit 720 is enabled ordisabled. Furthermore, since an input impedance Z_(S) to a source of thesecond transistor 712 in the first amplifier circuit 710 is much greaterthan an input impedance Z_(IN2) to a gate of the third transistor 721 inthe second amplifier circuit 720, current leakage does not occur or isreduced from the internal amplification node Y to the gate of the thirdtransistor 721. Thus, there is an effect that the amplification gain ofthe signal path to the first RF output signal RF_(OUT1) is not lost.

However, the inventive concept is not limited to the amplification block700 illustrated in FIG. 9A. For example, a plurality of amplifiercircuits other than the second amplifier circuit 720 may be connected inparallel through the internal amplification node Y. The plurality ofamplifier circuits may be the same as a configuration of the secondamplifier circuit 720.

Referring to FIG. 9B, the first amplifier circuit 710 and the secondamplifier circuit 720 further include current regulating circuits 716and 726, respectively, as compared with the amplification block 700 ofFIG. 9A. The current regulating circuit 716 includes transistor M_(S1)and the current regulating circuit 726 includes transistor M_(S2). Thetransistor M_(S1) may be turned on and off by switching control signalSWCSa and the transistor M_(S2) may be turned on and off by switchingcontrol signal SWCSb. Specifically, when there is a need to reducemagnitudes of the RF output signals RF_(OUT1) and RF_(OUT2), thetransistors M_(S1) and M_(S2) may be turned on. When the transistorsM_(S1) and M_(S2) are turned on, the RF output signals RF_(OUT1) andRF_(OUT2) having magnitudes smaller than those when the transistorsM_(S1) and M_(S2) are turned off may be output, respectively.Amplification gains of the first amplifier circuit 710 and the secondamplifier circuit 720 may be adjusted using the current regulatingcircuits 716 and 726, respectively.

However, the inventive concept is not limited to the current regulatingcircuits 716 and 726 illustrated in FIG. 9B. The amplification gain ofthe first amplifier circuit 710 and the second amplifier circuit 720 maybe implemented with various circuits. In addition, each of the amplifiercircuits 710 and 720 may each include more current regulating circuits.

FIG. 10 is a block diagram illustrating an embodiment of a plurality ofamplifier circuits included in the amplification blocks 331 a_1 to 331a_n of FIG. 6A, which is compatible with various interface circuits.

Referring to FIG. 10, the first amplifier circuit 710 compared with thatof FIG. 9A further includes a ground connecting circuit 714 providedwith a switching element SWb and an inductor L. The feedback circuit713′ of the first amplifier circuit 710 further includes a switchelement SWa as compared to the feedback circuit 713 of FIG. 9B. Thesecond amplifier circuit 720 of FIG. 10 may have the same configurationas the second amplifier circuit 720 illustrated in FIG. 9A.

In an embodiment, when the amplification block 700 is coupled to theantenna interface circuit 320 a of FIG. 5A, a mode of the amplificationblock 700 is determined to be a wide band mode, a switch element SWa isclosed, and a switch element SWb is connected to a ground node (orground potential). When the amplification block 700 is connected to theantenna interface circuit 320 b of FIG. 5B, a mode of an amplificationblock 800 is determined to be a narrow band mode, the switch element SWais opened, and the switch element SWb is connected to one terminal of aninductor L whose other terminal is connected to ground. In anembodiment, the amplification block 700 is connected/coupled to anantenna interface circuit using a switch element that is turned on/offwith a control signal.

FIGS. 11A and 11B are block diagrams illustrating an embodiment of aplurality of amplifier circuits included in the amplification blocks 331a_1 to 331 a_n of FIG. 6A.

Referring to FIG. 11A, the amplification block 800 includes a firstamplifier circuit 810 and a second amplifier circuit 820. The firstamplifier circuit 810 includes a first amplifier AMP1, a feedbackcircuit 813, and a first coupling capacitor C_(C1) 815. The firstamplifier circuit 810 amplifies the RF input signal RF_(IN) to outputthe first RF output signal RF_(OUT1). The second amplifier circuit 820includes a second amplifier AMP2 and a second coupling capacitor C_(C2)825. The second amplifier circuit 820 is implemented not to include thefeedback circuit 813 of the first amplifier circuit 810. Thus aconfiguration of the second amplifier circuit 820 is different from thatof the first amplifier circuit 810. The first amplifier AMP1 includes afirst transistor 811 and a second transistor 812. The second amplifierAMP2 includes a first transistor 821 and a second transistor 822.

The amplification block 800 includes a block node Z, and the firstamplifier circuit 810 and the second amplifier circuit 820 are connectedin parallel through the block node Z. Unlike the amplification block 700of FIG. 9A, the amplification gain of the first amplifier circuit 810 isthe same as that of the second amplifier circuit 820.

In an embodiment, the feedback circuit 813 has a sufficient impedancesuch that an input impedance Z_(IN1) viewed from an input terminal ofthe amplification block 800 is maintained within a predetermined rangeirrespective of whether the second amplifier circuit 820 is enabled ordisabled. The input impedance Z_(IN1) may be dependent on the impedanceof the feedback circuit 813 because an input impedance to the gate ofthe third transistor 821 is much greater than the impedance of thefeedback circuit 813. Accordingly, the amplification block 800 mayperform a stable impedance matching with the antenna using the feedbackcircuit 813.

The inventive concept is not limited to the amplification block 800illustrated in FIG. 11A. For example, a plurality of amplifier circuitsother than the second amplifier circuit 820 may be connected in parallelthrough the block node Z. The plurality of amplifier circuits may be thesame as a configuration of the second amplifier circuit 820.

Referring to FIG. 11B, a feedback circuit 813 (i.e., a first feedbackcircuit) of the first amplifier circuit 810 compared with FIG. 11Aincludes at least one variable resistive element R_(FV) and the secondamplifier circuit 820 further includes a second feedback circuit 823.The second feedback circuit 823 includes at least one variable resistiveelement R_(FV) and at least one capacitor element C_(F). In anembodiment, the second feedback circuit 823 is connected between asecond internal amplification node Y2 of the second amplifier AMP2 and asecond input node X2 of the second amplifier AMP2. The second feedbackcircuit 823 provides an output of the second internal amplification nodeY2 as a feedback to the second amplifier AMP2. For example, the variableresistance element R_(FV) may be a rheostat, a potentiometer, a digitalresistor, etc.

Variable resistive elements R_(FV) of the feedback circuits 813 and 823may be controlled such that an input impedance Z_(IN1) viewed from theinput terminal of the amplification block 800 is maintained within apredetermined range regardless of whether the second amplifier circuit820 is enabled or disabled. In an embodiment, a first resistance valueof the variable resistive element R_(FV) when only the first amplifiercircuit 810 is enabled is less than a second resistance value of thevariable resistive element R_(FV) when both of the first amplifiercircuit 810 and the second amplifier circuit 820 are enabled. Forexample, the second resistance value may be implemented to beapproximately twice as large as the first resistance value.

The inventive concept is not limited to the amplification block 800illustrated in FIG. 11B. For example, a plurality of amplifier circuitsother than the second amplifier circuit 820 may be connected in parallelthrough the block node Z. The plurality of amplifier circuits may be thesame as the configuration of the first amplifier circuit 810.

FIGS. 12A and 12B are block diagrams illustrating embodiments of aplurality of amplifier circuits included in the amplification blocks 331a_1 to 331 a_n of FIG. 6A, which are compatible with various interfacecircuits.

Referring to FIG. 12A, the first amplifier circuit 810 further includesa first ground connection circuit 814 having a switching element SWb1and an inductor L as compared with the first amplifier circuit 810 ofFIG. 11A. The first amplifier circuit 810 includes a first feedbackcircuit 813′ that further includes a switch element SWa as compared tothe first amplifier circuit 810 of FIG. 11A. The second amplifiercircuit 820 further includes a second ground connection circuit 824having a switch element SWb2 and an inductor L as compared with thesecond amplifier circuit 820 of FIG. 11A.

In an embodiment, when the amplification block 800 is coupled to theantenna interface circuit 320 a of FIG. 5A, a mode of the amplificationblock 800 is determined to be in a wideband mode, the switch elementSWa1 is closed, and switch elements SWb1 and SWb2 are connected toground (or potentials). When the amplification block 800 is connected tothe antenna interface circuit 320 b of FIG. 5B, the mode of theamplification block 800 is determined to be a narrow band mode, theswitch element SWa is opened, and switch elements SWb1 and SWb2 areconnected to terminals of inductors L whose other terminals areconnected to ground terminals, respectively.

Referring to FIG. 12B, the first amplifier circuit 810 further includesa first ground connection circuit 814 having a switching element SWb1and an inductor L, as compared to the first amplifier circuit 810 ofFIG. 11A. The first amplifier circuit 810 includes a first feedbackcircuit 813′ that furthers include a switch element SWa1 as compared tothe first amplifier circuit 810 of FIG. 11A. The second amplifiercircuit 820 further includes a second ground connection circuit 824having a switch element SWb2 and an inductor L, as compared with thesecond amplifier circuit 820 of FIG. 11A. The second amplifier circuit820 includes a second feedback circuit 823′ that further includes aswitch element SWa2 as compared to the second amplifier circuit 820 ofFIG. 11B.

In an embodiment, when the amplification block 800 is coupled to theantenna interface circuit 320 a of FIG. 5A, the mode of theamplification block 800 is determined to be a wideband mode, switchelements SWa1 and the SWa2 are closed, and switch elements SWb1 and SWb2are connected to the ground terminal. When the amplification block 800is connected to the antenna interface circuit 320 b of FIG. 5B, the modeof the amplification block 800 is determined to be the narrowband mode,and the switch elements SWa1 and SWa2 are opened, and the switchelements SWb1 and SWb2 are connected to terminals of inductors L whoseother terminals are connected to ground terminals, respectively.

FIG. 13 is a diagram for explaining an amplification block 900 accordingto an exemplary embodiment of the inventive concept, FIG. 14A is adiagram for explaining an operation in the wide band mode of theamplification block 900, and FIG. 14B is a diagram for explaining anoperation in the narrowband mode of the amplification block 900.

Referring to FIG. 13, the amplification block 900 include M amplifiercircuits 910 to 930, and M output circuits 901 to 903 are connected tothe amplification block 900. A first amplifier circuit 910 includes afirst amplifier AMP1, a feedback circuit 913, a ground connectioncircuit 914 and a coupling capacitor 915. The feedback circuit 913includes a resistance element R_(F), a capacitor element C_(F) and aswitch element SWa. The feedback circuit 913 is connected between aninternal amplification node Y of a first amplifier AMP1 and an inputnode X of the first amplifier AMP1. The ground connection circuit 914includes a switch element SWb and an inductor L having one terminal thatis grounded. The first amplifier AMP1 includes a first transistor 911and a second transistor 912.

The second to m-th amplifier circuits 920 to 930 are connected inparallel via the internal amplification node Y. Details of the amplifiercircuits 910 to 930 are as described above and will be omittedhereinafter. The second amplifier circuit 920 includes a secondamplifier AMP2 and a coupling capacitor 925. The second amplifier AMP2includes a first transistor 921 and a second transistor 922. The thirdamplifier circuit 930 includes a third amplifier AMP3 and a couplingcapacitor 935. The third amplifier AMP3 includes a first transistor 931and a second transistor 932.

A first output circuit 901 includes a first converter X1, a firstcapacitor bank CB1, a first mixer MIX1 and a first baseband filter F1.In an embodiment, the first converter X1 is a transformer. In anembodiment, the first output circuit 901 block signals other thansignals corresponding to carriers having a predetermined frequency froma first RF output signal RF_(OUT1) and downconverts signalscorresponding to the carriers to output the downconverted signals as afirst baseband signal XBAS_(OUT1). A configuration of the first outputcircuit 901 may be applied to the second to m-th output circuits 902 to903. For example, the first output circuit 901 may filter out componentshaving frequencies outside the bands associated with the carriers.

FIGS. 14A and 14B illustrate an amplification operation of anamplification block 900 in an intraband CA. Referring to FIG. 14A, anamplification block 900 receives an RF input signal RF_(IN) transmittedthrough a first carrier ω1 and a second carrier ω2 within apredetermined frequency band. In an embodiment, only the first amplifiercircuit 910 and the second amplifier circuit 920 are enabled in theamplification block 900. A switch element SWa of the first amplifiercircuit 910 is closed and a switch element SWb is connected to a groundpotential (or terminal). As such, the enable feedback circuit 913 isconnected between an internal amplification node Y of the firstamplifier AMP1 of the first amplifier circuit 910 and an input node X ofthe first amplifier AMP1.

The first amplifier circuit 910 amplifies the RF input signal RF_(IN) tooutput the amplified RF input signal as a first RF output signalRF_(OUT1), and the second amplifier circuit 920 receives a signal whoseRF input signal RF_(IN) is amplified by a predetermined amplificationgain from the internal amplification node Y and amplifies the signal tooutput the amplified signal as a second RF output signal RF_(OUT2). Inan embodiment, the first output circuit 901 converts only a signalcorresponding to the first carrier wave ω1 from the first RF outputsignal RF_(OUT1) as the first baseband signal XBAS_(OUT1) to output theconverted signal, and the second output circuit 902 converts only asignal corresponding to the second carrier wave ω2 from the second RFoutput signal RF_(OUT2) as the second baseband signal XBAS_(OUT2) tooutput the converted signal.

Referring to FIG. 14B, an amplification block 900 receives an RF inputsignal RF_(IN) transmitted through a first carrier ω1 and a secondcarrier ω2 within a predetermined frequency band. In an embodiment, onlythe first amplifier circuit 910 and the second amplifier circuit 920 inthe amplification block 900 are enabled. A switch element SWa of thefirst amplifier circuit 910 is opened and a switch element SWb isconnected to one terminal of an inductor L whose other terminal isconnected to ground. The feedback circuit 913 is not connected betweenthe internal amplification node Y of the first amplifier AMP1 in thefirst amplifier circuit 910 and the input node X of the first amplifierAMP1. For example, the open switch element SWa prevents the feedbackcircuit 913 from being connected to the internal amplification node Y.

The first amplifier circuit 910 amplifies the RF input signal RF_(IN) tooutput the amplified RF input signal as a first RF output signalRF_(OUT1), and the second amplifier circuit 920 receives a signal inwhich an RF input signal RF_(IN) is amplified by a predeterminedamplification gain from the internal amplification node Y and amplifiesthe received signal to output the amplified signal as a second RF outputsignal RF_(OUT2). In an embodiment, the first output circuit 901converts only a signal corresponding to the first carrier wave ω1 fromthe first RF output signal RF_(OUT1) as the first baseband signalXBAS_(OUT1) to output the converted signal, and the second outputcircuit 902 converts only a signal corresponding to the second carrierwave ω2 from the second RF output signal RF_(OUT2) as the secondbaseband signal XBAS_(OUT2) to output the converted signal.

FIG. 15 is a diagram illustrating a wireless communication device 1000according to an exemplary embodiment of the inventive concept.

Referring to FIG. 15, a wireless communication device 1000 includes anantenna 1010, a transceiver (or communication RF) 1020, a basebandprocessor 1030, an application processor 1050, memories 1040 and 1060, acamera 1070, and a display 1080. An application may be executed by theapplication processor 1050. For example, when an image is photographedthrough the camera 1070, the application processor 1050 may store thephotographed image in a second memory 1060 to display it on the display1080. The photographed image may be transmitted to the outside through atransceiver 1020 under a control of the baseband processor 1030. Thebaseband processor 1030 may temporarily store the photographed image ina first memory 1040 to transmit the photographed image. The basebandprocessor 1030 may also control communication for communication and datatransmission/reception.

The transceiver 1020 includes an antenna interface circuit 1022 and anRF integrated circuit 1024. The RF integrated circuit 1024 may includethe switching elements illustrated in FIGS. 8C, 10, 12A, 12B, togetherwith a feedback circuit, and the RF integrated circuit 1024 may becompatible with the antenna interface circuit 1022 having variouscircuit configuration. The transceiver 102 may perform an efficientamplification operation during a CA operation. In a step ofmanufacturing the transceiver (or receiver) 1020, a mode of the RFintegrated circuit 1024 may be determined according to a circuitconfiguration of the antenna interface circuit 1022. A control signalCS_(SET) according to the determined mode may be supplied to the RFintegrated circuit 1024. In an embodiment, on/off states of the switchelements included in the RF integrated circuit 1024 are controlled bythe control signal CS_(SET), and then the RF integrated circuit 1024 isconnected to the antenna interface circuit 1022.

FIG. 16 is a flow chart illustrating a method of manufacturing areceiver according to an exemplary embodiment of the inventive concept.Hereinafter, it is assumed that an RF integrated circuit is manufacturedin a configuration including switch elements, as illustrated in FIGS.8C, 10, 12A, and 12B.

Referring to FIG. 16, in a step S100, a mode of the RF integratedcircuit is determined based on a configuration of the antenna interfacecircuit. For example, when the RF integrated circuit is connected to theantenna interface circuit 320 a of FIG. 5A, the mode of the RFintegrated circuit is determined as the wideband mode. In addition, whenthe RF integrated circuit is connected to the antenna interface circuit320 b of FIG. 5B, the mode of the RF integrated circuit is determined asthe narrowband mode. Afterwards, in a step S120, a control signalaccording to the determined mode is provided to the RF integratedcircuit to set the mode of the RF integrated circuit. That is, theswitch elements included in the RF integrated circuit may be controlledbased on a control signal such that the RF integrated circuit operatesin the wide band mode or the narrowband mode. Thereafter, in a stepS140, the antenna interface circuit is connected to the RF integratedcircuit.

While the inventive concept has been described with reference toexemplary embodiments thereof, it is to be understood that the inventiveconcept is not limited to the disclosed exemplary embodiments, but, onthe contrary, is intended to cover various modifications and equivalentarrangements included within the spirit and scope of the disclosure.

While the inventive concept has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodthat various changes in form and details may be made therein withoutdeparting from the spirit and scope of the disclosure.

1. A receiver comprising an amplification block supporting carrieraggregation (C), the amplification block comprising: a first amplifiercircuit configured to receive a radio frequency (RF) input signal at ablock node from an outside source, amplify the RF input signal, andoutput the amplified RF input signal as a first RF output signal,wherein the first amplifier circuit comprises: a first amplifierconfigured to receive the RF input signal through a first input node toamplify the RF input signal; and a first feedback circuit coupledbetween the first input node and a first internal amplification node ofthe first amplifier to provide feedback to the first amplifier.
 2. Thereceiver of claim 1, Wherein the first feedback circuit has a specificimpedance such that an input impedance of the amplification circuit iskept within a predetermined range when the amplification circuitperforms an amplification operation according to any one of a non-CA, anintra-band CA, and an inter-band CA.
 3. The receiver of claim 1, whereinthe first feedback circuit comprises at least one resistance element andat least one capacitor element connected in series with the resistanceelement.
 4. The receiver of claim 1, wherein the first amplifiercomprises: a first transistor comprising a gate connected to the firstinput node; and a second transistor comprising a drain connected to afirst RF output node of the amplification block, wherein a source of thesecond transistor is coupled to a drain of the first transistor at thefirst internal amplification node.
 5. The receiver of claim 4, whereinthe amplification circuit further comprises a second amplifier circuitconnected in series with the first internal amplification node, whereinthe second amplifier circuit comprises a second amplifier configured toamplify a signal received from the first internal amplification nodethrough a second input node to output a second RF output signal.
 6. Thereceiver of claim 5, wherein the first transistor and the secondtransistor have different transconductances such that an amplificationgain corresponding to the first internal amplification node has apredetermined value.
 7. The receiver of claim 6, wherein anamplification gain of the first amplifier is different from anamplification gain of the second amplifier.
 8. The receiver of claim 5,wherein the second amplifier comprises: a third transistor comprising agate coupled to the second input node; and a fourth transistorcomprising a drain coupled to a second RF output node of theamplification circuit, wherein a source of the fourth transistor iscoupled to a drain of the third transistor.
 9. The receiver of claim 8,wherein a transconductance ratio between the first transistor and thesecond transistor of the first amplifier is different from atransconductance ratio between the third transistor and the fourthtransistor of the second amplifier.
 10. The receiver of claim 1, whereinthe amplification circuit further comprises a second amplifier circuitconnected in parallel with the first amplifier circuit through the blocknode, wherein the second amplifier circuit comprises a second amplifierconfigured to receive the RE input signal through a second input node,amplify the received RE input signal, and output the amplified RE inputsignal as a second RF output signal.
 11. The receiver of claim 10,wherein a configuration of the second amplifier circuit is differentfrom a configuration of the first amplifier circuit in that the secondamplifier circuit excludes a feedback circuit configured to provide afeedback signal to the second amplifier.
 12. The receiver of claim 10,wherein the second amplifier circuit further comprises a second feedbackcircuit coupled between the second input node and a second internalamplification node of the second amplifier to provide feedback to thesecond amplifier.
 13. The receiver of claim 12, wherein an impedance ofat least one of the first feedback circuit and the second feedbackcircuit is changed such that an input impedance of the amplificationcircuit is kept within a predetermined range when the amplificationcircuit performs an amplification operation according to any one of anon-CA, an intra-band CA and an inter-band CA.
 14. The receiver of claim12, wherein each of the first feedback circuit and the second feedbackcircuit comprises at least one variable resistance element.
 15. A radiofrequency (RF) integrated circuit comprising an amplification circuitconfigured to support carrier aggregation (CA), the amplificationcircuit comprising: a first amplifier circuit configured to receive anRF input signal at a block node from an outside source, the firstamplifier circuit including a first amplifier configured to amplify theRF input signal, and output the amplified RF input signal as a first RFoutput signal, wherein the first amplifier circuit comprises a feedbackcircuit coupled between a first input node of the first amplifierconfigured to receive the RF input signal and a first internalamplification node of the first amplifier, and wherein the feedbackcircuit selectively provides feedback to the first amplifier accordingto whether a mode of the RF integrated circuit is set to one of awideband mode and a narrowband mode.
 16. The RF integrated circuit ofclaim 15, wherein the feedback circuit comprises: a switching elementconfigured to be in an on state in the wideband mode and in an off statein the narrowband mode; at least one resistance element connected inseries with the switching element; and at least one capacitor element.17. The RF integrated circuit of claim 15, wherein the first amplifiercircuit further comprises a ground connection circuit configured to beselectively connected to one terminal of a source degeneration inductorelement whose other terminal is grounded according to the mode. 18-20.(canceled)
 21. The RF integrated circuit of claim 15, wherein the RFintegrated circuit is set to the wideband mode when an antenna interfacecircuit comprising a plurality of duplexers and at least one externalamplifier is connected to one port.
 22. The RF integrated circuit ofclaim 15, wherein the RF integrated circuit is set to the narrowbandmode when an antenna interface circuit comprising a plurality ofduplexers is connected through a plurality of ports.
 23. A method ofcontrolling a receiver, the method comprising: determining an operationmode of the receiver to be one of a narrowband mode and a wideband modebased on a configuration of an antenna interface circuit; setting afirst control signal according to the determined mode; outputting thefirst control signal to the receiver to enable or disable a feedbackcircuit of the receiver; and connecting the receiver to the antennainterface circuit, wherein the receiver comprises an amplifierconfigured to receive a radio frequency (RF) input signal through aninput node and amplify the received RF input signal, and wherein thefeedback circuit is connected between the input node and an internalamplification node of the amplifier to provide feedback to theamplifier.
 24. (canceled)